pn4391 / pn4392 / pn4393 / mmbf4391 / mmbf4392 / mmbf4393 pn4391 pn4392 pn4393 mmbf4391 mmbf4392 mmbf4393 n-channel switch this device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. sourced from process 51. see j111 for characteristics. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations thermal characteristics ta = 25c unless otherwise noted symbol parameter value units v dg drain-gate voltage 30 v v gs gate-source voltage - 30 v i gf forward gate current 50 ma t j ,t stg operating and storage j unction temperature range -55 to +150 c symbol characteristic max units pn4391 *mmbf4391 p d total device dissipation derate above 25 c 350 2.8 225 1.8 mw mw/ c r q jc thermal resistanc e, j unction to case 125 c/w r q ja thermal resistanc e, j unction to ambient 357 556 c/w g s d to-92 sot-23 mark: 6j / 6k / 6g g s d * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." discrete power & signal technologies ? 1997 fairchild semiconductor corporation
pn4391 / pn4392 / pn4393 / mmbf4391 / mmbf4392 / mmbf4393 electrical characteristics ta = 25c unless otherwise noted symbol parameter test conditions min max units off characteristics on characteristics i dss zero-gate voltage drain current* v ds = 20 v, v gs = 0 pn4391 pn4392 pn4393 50 25 5.0 150 75 30 ma ma ma v ds( on ) drain-source on voltage i d = 12 ma, v gs = 0 pn4391 i d = 6.0 ma, v gs = 0 pn4392 i d = 3.0 ma, v gs = 0 pn4393 0.4 0.4 0.4 v v v r ds( on ) drain-source on resistance i d = 1.0 ma, v gs = 0 pn4391 pn4392 pn4393 30 60 100 w w w small-signal characteristics r ds(on) drain-source on resistance v ds = v gs = 0, f= 1.0 khz pn4391 pn4392 pn4393 30 60 100 w w w c iss input capac itance v ds = 20, v gs = 0, f = 1.0 mhz 14 pf c rss reverse transfer capacitance v gs = 12 v, f = 1.0 mhz pn4391 v gs = 7.0 v, f = 1.0 mhz pn4392 v gs = 5.0 v, f = 1.0 mhz pn4393 3.5 3.5 3.5 pf pf pf switching characteristics t r rise time i d( on ) = 12 ma pn4391 i d( on ) = 6.0 ma pn4392 i d( on ) = 3.0 ma pn4393 5.0 5.0 5.0 ns ns ns t f fall time v gs( off) = 12 v pn4391 v gs( off) = 6.0 v pn4392 v gs( off) = 3.0 v pn4393 15 20 30 ns ns ns t on turn-on time i d( on) = 12 ma pn4391 i d( on) = 6.0 ma pn4392 i d( on) = 3.0 ma pn4393 15 15 15 ns ns ns t off turn-off time v gs( off) = 12 v pn4391 v gs( off) = 6.0 v pn4392 v gs( off) = 3.0 v pn4393 20 35 50 ns ns ns * pulse test: pulse width 300 m s, duty cycle 1.0% v (br) gss gate-source breakdown voltage i g = 1.0 m a, v ds = 0 - 30 v i gss gate reverse current v gs = 15 v, v ds = 0 v gs = 15 v, v ds = 0, t a = 150 c - 1.0 - 0.2 na m a v gs(off) gate-source cutoff voltage v ds = 20 v, i d = 1.0 na pn4391 pn4392 pn4393 - 4.0 - 2.0 - 0.5 - 10 - 5.0 - 3.0 v v v v gs(f) gate-source forward voltage i g = 1.0 ma, v ds = 0 1.0 v i d(off) drain cutoff leakage current v ds = 20 v, v gs = 12 v pn4391 v ds = 20 v, v gs = 7.0 v pn4392 v ds = 20 v, v gs = 5.0 v pn4393 v ds = 20 v, v gs = 12 v, t a = 150 c pn4391 v ds = 20 v, v gs = 7.0 v,t a = 150 c pn4392 v ds = 20 v, v gs = 5.0 v,t a = 150 c pn4393 0.1 0.1 0.1 0.2 0.2 0.2 na na na m a m a m a n-channel switch (continued)
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